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  • 1.
    Sadowski, Grzegorz
    et al.
    Malmö University, Faculty of Technology and Society (TS), Department of Materials Science and Applied Mathematics (MTM). Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University.
    Shu, Rui
    Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University 2 , Linköping SE-581 83, Sweden.
    le Febvrier, Arnaud
    Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University 2 , Linköping SE-581 83, Sweden.
    Han, Zhijia
    Department of Materials Science and Engineering, Southern University of Science and Technology 3 , Shenzhen, Guangdong 518055, China.
    Music, Denis
    Malmö University, Faculty of Technology and Society (TS), Department of Materials Science and Applied Mathematics (MTM). Malmö University, Biofilms Research Center for Biointerfaces.
    Liu, Weishu
    Department of Materials Science and Engineering, Southern University of Science and Technology 3 , Shenzhen, Guangdong 518055, China;Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology 5 , Shenzhen, Guangdong 518055, China.
    Eklund, Per
    Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University 2 , Linköping SE-581 83, Sweden.
    Structural evolution and thermoelectric properties of Mg3SbxBi2x thin films deposited by magnetron sputtering2023In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 41, no 4, article id 043409Article in journal (Refereed)
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  • 2.
    Sadowski, Grzegorz
    et al.
    Malmö University, Faculty of Technology and Society (TS), Department of Materials Science and Applied Mathematics (MTM). Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping.
    Zhu, Yongbin
    Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China.
    Shu, Rui
    Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping SE-581 83, Sweden.
    Feng, Tao
    Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China.
    le Febvrier, Arnaud
    Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping SE-581 83, Sweden.
    Music, Denis
    Malmö University, Faculty of Technology and Society (TS), Department of Materials Science and Applied Mathematics (MTM).
    Liu, Weishu
    Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China;Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China.
    Eklund, Per
    Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping SE-581 83, Sweden.
    Epitaxial growth and thermoelectric properties of Mg3Bi2 thin films deposited by magnetron sputtering2022In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 120, no 5, article id 051901Article in journal (Refereed)
    Abstract [en]

    Mg3Sb2-based thermoelectric materials attract attention for applications near room temperature. Here, Mg-Bi films were synthesized using magnetron sputtering at deposition temperatures from room temperature to 400 °C. Single-phase Mg3Bi2 thin films were grown on c-plane-oriented sapphire and Si(100) substrates at a low deposition temperature of 200 °C. The Mg3Bi2 films grew epitaxially on c-sapphire and fiber-textured on Si(100). The orientation relationships for the Mg3Bi2 film with respect to the c-sapphire substrate are (0001) Mg3Bi2‖(0001) Al2O3 and [112⎯⎯2¯0] Mg3Bi2‖[112⎯⎯2¯0] Al2O3. The observed epitaxy is consistent with the relatively high work of separation, calculated by the density functional theory, of 6.92 J m−2 for the Mg3Bi2 (0001)/Al2O3 (0001) interface. Mg3Bi2 films exhibited an in-plane electrical resistivity of 34 μΩ m and a Seebeck coefficient of +82.5 μV K−1, yielding a thermoelectric power factor of 200 μW m−1 K−2 near room temperature.This work was supported financially by the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University (Faculty Grant SFO-Mat-LiU No. 2009 00971), the Knut and Alice Wallenberg Foundation through the Wallenberg Academy Fellows program (No. KAW-2020.0196), the Swedish Research Council (VR) under Project Nos. 2016-03365 and 2021-03826, the National Key Research and Development Program of China under Grant No. 2018YFB0703600, the National Natural Science Foundation of China under Grant No. 51872133, the Guangdong Innovative and Entrepreneurial Research Team Program under Grant No. 2016ZT06G587, and the Tencent Foundation through the XPLORER PRIZE, Guangdong Provincial Key Laboratory Program (No. 2021B1212040001) from the Department of Science and Technology of Guangdong Province. The computations were performed on resources provided by the Swedish National Infrastructure for Computing (SNIC) at National Supercomputer Centre (NSC) partially funded by the Swedish Research Council through Grant Agreement No. 2018-05973.

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