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MCDHF and RCI calculations of energy levels, lifetimes, and transition rates in Si III and Si IV
Department of Physics, Lund University, Post Office Box 118, Lund, 22100, Sweden; Department of Physics, Çanakkale Onsekiz Mart University, Çanakkale, Turkey;.
Department of Physics, Lund University, Post Office Box 118, Lund, 22100, Sweden; Institute of Modern Physics, Fudan University, Shanghai, China.
Malmö University, Faculty of Technology and Society (TS), Department of Materials Science and Applied Mathematics (MTM).ORCID iD: 0000-0001-6818-9637
Malmö University, Faculty of Technology and Society (TS), Department of Materials Science and Applied Mathematics (MTM).ORCID iD: 0000-0001-9853-2555
2019 (English)In: Astronomy and Astrophysics, ISSN 0004-6361, E-ISSN 1432-0746, ISSN 0004-6361, Vol. 631, article id A29Article in journal (Refereed) Published
Abstract [en]

We present extensive multiconfiguration Dirac-Hartree-Fock and relativistic configuration interaction calculations including 106 states in doubly ionized silicon (Si III) and 45 states in triply ionized silicon (Si IV), which are important for astrophysical determination of plasma properties in different objects. These calculations represents an important extension and improvement of earlier calculations especially for Si III. The calculations are in good agreement with available experiments for excitation energies, transition properties, and lifetimes. Important deviations from the NIST-database for a selection of perturbed Rydberg series are discussed in detail.

Place, publisher, year, edition, pages
EDP Sciences, 2019. Vol. 631, article id A29
Keywords [en]
atomic data, physics, atomic physics
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:mau:diva-36791DOI: 10.1051/0004-6361/201935618ISI: 000498947000001Scopus ID: 2-s2.0-85103687785OAI: oai:DiVA.org:mau-36791DiVA, id: diva2:1500349
Funder
Swedish Research Council, 2016-04185Available from: 2020-11-11 Created: 2020-11-11 Last updated: 2024-06-17Bibliographically approved

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Jönsson, PerHartman, Henrik

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